Tohoku Univ. Technology：Simple method to siliconize Mo/W： T21-214
Silicide film can be formed with low cost simply by dipping the free-form base material into the bath.
Mo material is excellent in heat resistance. Since Mo material is easily oxidized at high temperature, it is indispensable to form MoSi2 protective film to prevent it. As a conventional method, the pack cementation method is known. Although this method can stably form MoSi2 films, it requires processing conditions of 1000 ℃ or more and 10 hours or more, leading to high costs. The present invention relates to a method of forming a MoSi2/WSi2 film (e.g., 30 μm) on the surface of a Mo/W material by simply immersing a base material in a bath (e.g., 800 ℃. for 15 min.). According to this method, the largest advantage is that there is no restriction on the shape that can be treated. The base material processed into a product shape can be subjected to silicification treatment. The Mo material having the present invention has been confirmed to exhibit excellent oxidation resistance (see right table), and is useful as a more convenient silicification method.
- Company：Tohoku Techno Arch Co., Ltd.
- Price：Other
